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BB503M
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
REJ03G0835-0500 (Previous ADE-208-811C) Rev.5.00 Aug.10.2005
Features
* * * * Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4)
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Notes:
1. Marking is "CS-". 2. BB503M is individual type number of RENESAS BBFET.
Rev.5.00 Aug 10, 2005 page 1 of 10
BB503M
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 -0 +6 -0 20 150 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| ciss coss crss PG NF Min 6 +6 +6 -- -- 0.5 0.5 7 19 1.4 0.7 -- 17 -- Typ -- -- -- -- -- 0.7 0.7 10 24 1.7 1.1 0.025 22 1.8 Max -- -- -- +100 +100 1.0 1.0 13 29 2.0 1.5 0.05 -- 2.4 Unit V V V nA nA V V mA mS pF pF pF dB dB Test conditions ID = 200 A, VG1S = VG2S = 0 IG1 = +10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V ID = 100 A VDS = 5 V, VG1S = 5 V ID = 100 A VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 47 k VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 47 k, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 47 k f = 1 MHz VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 47 k f = 900 MHz
Rev.5.00 Aug 10, 2005 page 2 of 10
BB503M
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1
Drain A ID
Source
Application Circuit VAGC = 4 to 0.3 V BBFET VDS = 5 V RFC Output
Input
RG VGG = 5 V
Rev.5.00 Aug 10, 2005 page 3 of 10
BB503M
900MHz Power Gain, Noise Figure Test Circuit
VG1 VG2 C4 C5 VD C6
R1
R2 C3 G2
R3 D L3
RFC
Output (50)
L4
Input (50)
L1 L2
G1 S
C1
C2
C1, C2 : C3 : C4 to C6 : R1 : R2 : R3 :
Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 47 k 47 k 4.7 k
L1: 10
10
L2:
26
3 3
(1mm Copper wire) Unit: mm
8
21 L4: 29
10 7 7 10
L3:
18
RFC: 1mm Copper wire with enamel 4turns inside dia 6mm
Rev.5.00 Aug 10, 2005 page 4 of 10
BB503M
Maximum Channel Power Dissipation Curve
Typical Output Characteristics
20 VG2S = 4 V VG1 = VDS
k
Channel Power Dissipation Pch (mW)
200
150
Drain Current ID (mA)
16
12
RG
=
22
100
8
50
4
k 47 68 k k 100
33
k
0
50
100
150
200
0
1
2
3
4
5
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
20 20 VDS = 5 V RG = 33 k
2V
Drain Current vs. Gate1 Voltage
VDS = 5 V RG = 47 k 2V 12 4V 8 3V
Drain Current ID (mA)
12
4V 3V
8
4
VG2S = 1 V
Drain Current ID (mA)
16
16
4
VG2S = 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage
VG1 (V)
Gate1 Voltage
VG1 (V)
Drain Current vs. Gate1 Voltage
20 VDS = 5 V RG = 68 k
Forward Transfer Admittance vs. Gate1 Voltage
Forward Transfer Admittance |yfs| (mS)
30 VDS = 5 V RG = 33 k f = 1 kHz
4V 3V
16
24
Drain Current ID (mA)
12
2V
18
2V
8
3V
VG2S = 1 V
12
4
6
VG2S = 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Rev.5.00 Aug 10, 2005 page 5 of 10
BB503M
Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance vs. Gate1 Voltage
Forward Transfer Admittance |yfs| (mS)
30 VDS = 5 V RG = 47 k f = 1 kHz
4V 3V
Forward Transfer Admittance |yfs| (mS)
30 VDS = 5 V RG = 68 k f = 1 kHz
4V 3V
24
24
2V
18
18
2V
12
12
6
VG2S = 1 V
6
VG2S = 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Power Gain vs. Gate Resistance
30 4
Noise Figure vs. Gate Resistance
VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz
Power Gain PG (dB)
Noise Figure NF (dB)
50 100
25 20 15 10 5 0 10 VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz
3
2
1
20
0 10
20
50
100
Gate Resistance RG (k)
Gate Resistance RG (k)
Power Gain vs. Drain Current
30 25 4
Noise Figure vs. Drain Current
VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz
Noise Figure NF (dB)
Power Gain PG (dB)
3
20 15 10 5 0 0 VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 20
2
1
0
0
5
10
15
20
Drain Current ID (mA)
Drain Current ID (mA)
Rev.5.00 Aug 10, 2005 page 6 of 10
BB503M
Power Gain vs. Gate2 to Source Voltage
25
Drain Current vs. Gate Resistance
20
Drain Current ID (mA)
15
Power Gain PG (dB)
20
15
10
10 VDS = 5 V RG = 47 k f = 900 MHz 2 3 4
5
VDS = VG1 = 5 V VG2S = 4 V
5
0 10
20
50
100
0 1
Gate Resistance RG (k) Noise Figure vs. Gate2 to Source Voltage
5 4
Gate2 to Source Voltage VG2S (V)
Input Capacitance vs. Gate2 to Source Voltage
4
Input Capacitance Ciss (pF)
Noise Figure NF (dB)
VDS = 5 V RG = 47 k f = 900 MHz
3
3
2
2
1
VDS = 5 V RG = 47 k f = 1 MHz 0 1 2 3 4
1 1
2
3
4
0
Gate2 to Source Voltage VG2S (V)
Gate2 to Source Voltage VG2S (V)
Gain Reduction vs. Gate2 to Source Voltage
0
Gain Reduction GR (dB)
10
20
30 VDS = VG1 = 5 V VG2S = 4 V RG = 47 k 4 3 2 1 0
40
50
Gate2 to Source Voltage VG2S (V)
Rev.5.00 Aug 10, 2005 page 7 of 10
BB503M
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2
S21 Parameter vs. Frequency
90 120
Scale: 1 / div.
60
-150
-30
Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 47 k , Zo = 50 50 to 1000 MHz (50 MHz step)
Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 47 k , Zo = 50 50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.002 / div.
60
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
-.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1
-5 -4 -3
Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 47 k , Zo = 50 50 to 1000 MHz (50 MHz step)
Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 47 k , Zo = 50 50 to 1000 MHz (50 MHz step)
Rev.5.00 Aug 10, 2005 page 8 of 10
BB503M
S Parameter
(VDS = VG1 = 5V, VG2S = 4V, RG = 47k, Zo = 50)
f(MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 MAG. 0.975 0.977 0.975 0.972 0.968 0.963 0.954 0.946 0.937 0.930 0.920 0.914 0.902 0.886 0.879 0.873 0.857 0.845 0.838 0.824 ANG. -2.6 -6.5 -9.1 -12.4 -15.6 -18.9 -22.2 -25.3 -28.2 -31.5 -34.7 -37.4 -40.4 -43.5 -46.1 -48.9 -52.0 -54.5 -57.2 -59.6 MAG. 2.37 2.37 2.36 2.33 2.32 2.30 2.28 2.25 2.22 2.19 2.16 2.13 2.09 2.07 2.03 1.99 1.96 1.93 1.90 1.86 S21 ANG. 176.1 172.1 168.0 163.8 159.9 156.0 151.8 148.2 144.1 140.2 136.3 132.7 129.3 125.4 122.0 118.3 114.9 111.4 108.1 104.9 MAG. 0.00097 0.00162 0.00222 0.00282 0.00388 0.00437 0.00518 0.00567 0.00631 0.00637 0.00720 0.00747 0.00738 0.00758 0.00757 0.00729 0.00723 0.00706 0.00659 0.00574 S12 ANG. 74.4 89.8 78.2 83.8 81.1 76.0 73.6 75.6 72.5 72.7 70.3 67.0 69.2 68.6 66.0 67.5 68.8 68.3 67.5 71.0 MAG. 0.995 0.998 0.997 0.996 0.994 0.993 0.991 0.989 0.986 0.984 0.981 0.978 0.975 0.972 0.968 0.966 0.962 0.959 0.954 0.952 S22 ANG. -1.9 -3.9 -5.8 -8.0 -10.0 -11.8 -13.9 -15.8 -17.8 -19.6 -21.6 -23.4 -25.4 -27.3 -29.0 -31.0 -32.9 -34.8 -36.6 -38.5
Rev.5.00 Aug 10, 2005 page 9 of 10
BB503M
Package Dimensions
JEITA Package Code SC-61AA RENESAS Code PLSP0004ZA-A Package Name MPAK-4 / MPAK-4V MASS[Typ.] 0.013g
D e2 b1 B B e
A Q c
E
HE
Reference Symbol Dimension in Millimeters
L A A xM S A b
L1 A3 e2
LP
e
A2
A
I1
b5 yS A1 S e1
b b2 c c1 c
b1 b3 c1
I1
b4
A-A Section
B-B Section
Pattern of terminal position areas
A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 I1 Q
Min 1.0 0 1.0 0.35 0.55
Nom
0.1 2.7 1.35
1.1 0.25 0.42 0.62 0.4 0.6 0.13 0.11 1.5 0.95 0.85 2.8
Max 1.3 0.1 1.2 0.5 0.7
0.15 3.1 1.65
2.2 0.35 0.15 0.25
3.0 0.75 0.55 0.65 0.05 0.05 0.55 0.75 1.05
1.95 0.3
Ordering Information
Part Name BB503MCS-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Aug 10, 2005 page 10 of 10
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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